City University of Hong Kong's Breakthrough with TeSeO

Revolutionizing Semiconductors: City University of Hong Kong's Breakthrough with TeSeO

The semiconductor industry is the foundation of modern electronics, powering everything from smartphones to renewable energy systems. Despite its critical role, traditional semiconductors, particularly p-type materials, face challenges like limited mobility of charge carriers and stability issues. Addressing these challenges, researchers at the City University of Hong Kong (CityU) have developed an innovative material called TeSeO (Tellurium-Selenium-Oxygen). This novel compound is a game-changer, introducing enhanced performance, stability, and cost-effectiveness to p-type semiconductors. By improving the mobility of positively charged carriers, or holes, TeSeO paves the way for more efficient and durable devices, unlocking potential in areas such as ultraviolet (UV), visible, and short-wave infrared (SWIR) technologies.

The breakthrough lies in an advanced inorganic blending strategy, which combines three critical components: intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor elements. This strategic integration gives TeSeO unique properties, most notably its tunable bandgap. Through careful engineering of its band structure, the research team achieved a bandgap range of 0.7 eV to 2.2 eV. This flexibility enables TeSeO to cater to various technological applications, from visible light sensors to advanced photodetectors for infrared imaging. The team’s approach demonstrates a leap in materials science, blending innovation with practical functionality.

The performance of TeSeO is exceptional, particularly in two critical applications: thin-film transistors (TFTs) and flexible photodetectors. TeSeO-based TFTs outperform conventional p-type semiconductors, such as metal oxides and organic materials, in both charge carrier mobility and air stability. Similarly, flexible photodetectors made from TeSeO offer unmatched sensitivity across a broad light spectrum while maintaining mechanical flexibility. These advancements address a major industry bottleneck, as many traditional p-type materials struggle with stability and performance under real-world conditions.

What sets TeSeO apart is its ability to deliver high performance without compromising on cost or scalability. The compound is air-stable, durable, and simple to fabricate, making it a viable choice for mass production. Its flexibility and stability make it ideal for applications in wearable devices, foldable electronics, and advanced imaging systems. Furthermore, its tunable bandgap makes it suitable for optoelectronic devices like UV sensors, visible light detectors, and SWIR cameras, which are increasingly in demand in sectors like healthcare, security, and renewable energy. The development of TeSeO also reflects the growing importance of interdisciplinary collaboration. By merging insights from chemistry, materials science, and electronic engineering, the team at CityU created a material that not only meets current demands but anticipates future challenges in semiconductor technology. TeSeO embodies the spirit of innovation, offering a practical solution to industry needs while expanding the scope of what is possible in device design.

In conclusion, TeSeO is a transformative development in the field of semiconductors. By addressing the limitations of traditional P-type materials and offering superior performance and stability, it sets a new standard for the industry. Its diverse applications, from flexible electronics to optoelectronic devices, highlight its potential to drive the next wave of technological innovation. With continued research and development, TeSeO could redefine the future of semiconductors, making high-performance, cost-effective devices a reality.

(Sources: City University of Hong Kong Research Story, Nature Communications)

Reference

1. Enhancing semiconductor functionality with TeSeO Materials for future electronics (https://www.cityu.edu.hk/research/stories/2024/09/26/enhancing-semiconductor-functionality-teseo-materials-future-electronics?utm_source=chatgpt.com)

2. Meng, Y., Wang, W., Fan, R. et al. An inorganic-blended p-type semiconductor with robust electrical and mechanical properties. Nat Commun 15, 4440 (2024). https://doi.org/10.1038/s41467-024-48628-z